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1N4933G/L-1N4937G/L
Vishay Lite-On Power Semiconductor
1.0A Fast Recovery Glass Passivated Rectifier
Features
D D D D
Glass passivated die construction Diffused Junction Fast switching for high efficiency High current capability and low forward voltage drop
DO - 41 A - 405
D Surge overload rating to 30A peak D Plastic material - UL Recognition flammability
classification 94V-0
14 451
Absolute Maximum Ratings
Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage DC Blocking lt =DC Bl ki voltage Test Conditions Type 1N4933G/GL 1N4934G/GL 1N4935G/GL 1N4936G/GL 1N4937G/GL Symbol VRRM =VRWM V =VR Value 50 100 200 400 600 30 1 -65...+150 Unit V V V V V A A C
Peak forward surge current Average forward current TA=75C Junction and storage temperature range
IFSM IFAV Tj=Tstg
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current Reverse recovery time Diode capacitance Thermal resistance junction to ambient Test Conditions IF=1A TA=25C TA=100C IF=1A,IR=0.5A,Irr=0.25A VR=4V, f=1MHz Type Symbol VF IR IR trr CD RthJA Min Typ Max 1.2 5 100 200 Unit V
mA mA
ns pF pF
15 100
Rev. A2, 24-Jun-98
1 (4)
1N4933G/L-1N4937G/L
Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified)
IFSM - Peak Forward Surge Current ( A ) IFAV - Average Forward Current ( A ) 1.0 0.8 30
Pulse Width 8.3 ms Single Half-Sine-Wave
20
0.6
0.4
10
0.2
PC Board Mounted 9.5mm Lead Lengths
0 25
15486
50
75
100
125 150
175 200
15488
0 1.0
10 Number of Cycles at 60 Hz
100
Tamb - Ambient Temperature ( C )
Figure 1. Max. Average Forward Current vs. Ambient Temperature
10
Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles
100 C D - Diode Capacitance ( pF )
IF - Forward Current ( A )
1.0
10
0.1
Tj = 25C Pulse Width = 300 s
0.01 0
15487
0.4
0.8
1.2
1.6
15489
1.0 1.0
VF - Forward Voltage ( V )
10 VR - Reverse Voltage ( V )
100
Figure 2. Typ. Forward Current vs. Forward Voltage
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
2 (4)
Rev. A2, 24-Jun-98
1N4933G/L-1N4937G/L
Vishay Lite-On Power Semiconductor Dimensions in mm
14447
Case: molded plastic Polarity: cathode band Approx. weight: DO-41 0.35 grams, A-405 0.20 grams Mounting position: any Marking: type number
Rev. A2, 24-Jun-98
3 (4)
1N4933G/L-1N4937G/L
Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
4 (4)
Rev. A2, 24-Jun-98

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